Skip to main content


Sánchez Barrera

Contact data:

Extension: 436127
Direct phone: 932557327
Email: This email address is being protected from spambots. You need JavaScript enabled to view it.
Department: MMFO

Research interest

My research activities pivote around the development of functional oxides thin films, mainly ferroelectric HfO2, and their integration into epitaxial complex heterostructures, with particular interest in the integration with silicon. 


University Degrees:

Degree in Physics from University of Barcelona


PhD in Physics from University of Barcelona


Epitaxy of oxides

Ferroelectric HfO2

Integration of ferroelectrics with Si(001)

Scientific Highlights:


·      J. Lyu, T. Song, I. Fina, and F. Sánchez, High polarization, endurance and retention in sub-5 nm Hf0.5Zr0.5O2 filmsNanoscale 12, 11280 (2020)

·      S. Estandía, N. Dix, M.F. Chisholm, I. Fina, and F. Sánchez, Domain matching epitaxy of ferroelectric Hf0.5Zr0.5O2(111) on La2/3Sr1/3MnO3(001), Crystal Growth & Design 20, 3801 (2020)

·    J. Lyu, I. Fina, J. Fontcuberta, and F. Sánchez, Epitaxial Integration on Si(001) of Ferroelectric Hf0.5Zr0.5O2 Capacitors with High Retention and EnduranceACS Applied Materials & Interfaces 11, 6224 (2019)

 ·      J. Lyu, I. Fina, R. Solanas, J. Fontcuberta, and F. Sánchez, Growth Window of Ferroelectric Epitaxial Hf0.5Zr0.5O2 Thin FilmsACS Applied Electronic Materials 1, 220 (2019)

·      S. Estandía, N. Dix, J. Gazquez, I. Fina, J. Lyu, M. F. Chisholm, J. Fontcuberta, and F. Sánchez, Engineering ferroelectric Hf0.5Zr0.5O2 thin films by epitaxial stress, ACS Applied Electronic Materials 1, 1449 (2019)

·      J. Lyu, I. Fina, R. Solanas, J. Fontcuberta, and F. Sánchez, Robust ferroelectricity in epitaxial Hf1/2Zr1/2O2 thin filmsApplied Physics Letters 113, 082902 (2018)

  • ·  J. Lyu, S. Estandía, J. Gazquez, M. F. Chisholm, I. Fina, N. Dix, J. Fontcuberta, and F. Sánchez, Control of polar orientation and lattice strain in epitaxial BaTiO3 films on siliconACS Applied Materials & Interfaces 10, 25529 (2018)