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SCIENTIFIC & TECHNICAL SERVICES

Molecular Beam Epitaxy

The Laboratory of MBE (L-MBE) is a scientific service developing own research and supporting research of other groups based on group IV semiconductor heterostructures. The L-MBE belongs to the Scientific Service Unit and is also part of the Laboratory of Optical Properties. The service is scientifically coordinated by Dr. M. Isabel Alonso and governed by a commission detailed below. The service is managed according to the regulations established by the commission.

Scientists in charge

User's Committee

Joan Bausells
IMB-CNM-CSIC
Jordi Fraxedas
ICN2-CSIC
Javier Rodríguez-Viejo
UAB

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Equipment

Ultra-high vacuum system (Omicron) composed of Fast-entry-lock chamber and main chamber for MBE deposition on 10cm wafers.

Sources

  • Electron-beam evaporator for Si
  • High temperature effusion cell for Ge
  • Carbon sublimation source with a pyrolytic graphite filament
  • High temperature effusion cell for B
  • Low temperature effusion cell for Sb
  • GaP decomposition cell for P2.

Control Instruments

  • Process software.
  • Cross beam mass analyser for Si flux control or RGA.
  • Rate monitor (UHV quartz microbalance sensor head).
  • RHEED e-source (30 kV) and screen on lead glass.

Molecular Beam
Epitaxy

Address:

ICMAB
Campus UAB
(in front of Firehouse)
08193, Bellaterra
Spain

E-mail:

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Phone: