Piezoelectric response and optical switch of polarization in BaTiO3 and ferroelectric HfO2

Huan Tan, Ferroelectric Oxide Films for Energy and Memory Devices (FOXEM) Group at ICMAB-CSIC

Date: Wednesday, 27 September 2023
Time: 11:00 AM
Venue: Institut de Ciència de Materials de Barcelona (ICMAB, CSIC) - Sala d'Actes Carles Miravitlles and ONLINE (Register here to attend by Zoom)

Abstract:

Ferroelectric materials, particularly oxide materials, that exhibit photovoltaic effect can have their electrical properties or polarity influenced by light. Photoferroelectrics can display substantial open-circuit voltages or switchable photoelectric responses when illuminated. In this thesis, two different ferroelectric materials were studied, one is an archetypically perovskite oxide ferroelectric BaTiO3 (BTO), another is the novel ferroelectric hafnium oxide (HfO2). The objective is to advance on the comprehension of ferroelectric and photoferroelectric phenomenon with these materials. This will be done by using PFM as primarily tool for ferroelectric characterization.

Supervisor:

• Ignasi Fina Martínez, FOXEM group, ICMAB-CSIC

• President: Dr. Alberto Rivera Calzada, Universidad Complutense de Madrid, Spain
• Secretary: Dr. Enric Menéndez Dalmau, Universitat Autònoma de Barcelona, Spain
• Vocal: Dr. Morgan Trassin, ETH Zurich, Switzerland

University: Universitat Autònoma de Barcelona (UAB)
PhD Programme: Materials Science

Sketch of PFM characterization under illumination based on ferroelectric thin films | Huan Tan ICMAB, CSIC