Robust ferroelectricity in epitaxial Hf1/2Zr1/2O2 thin films

Robust ferroelectricity in epitaxial Hf1/2Zr1/2O2 thin films

Scientific Highlights Materials for information science and electronics 07 September 2018 715 hits Anna May Masnou

J. LyuI. FinaR. SolanasJ. Fontcuberta, and F. Sánchez. Appl. Phys. Lett. 113, 082902 (2018)

DOI: 10.1063/1.5041715

This study is the first on ferroelectric hafnium oxide published by the MULFOX group. This ferroelectric metastable phase is quite a new topic, and in this work they present its excellent ferroelectric properties, including fatigue and retention. 

Abstract: Ferroelectric orthorhombic Hf0.5Zr0.5O2 thin films have been stabilized epitaxially on La2/3Sr1/3MnO3/SrTiO3(001) by pulsed laser deposition. The epitaxial orthorhombic films, (111)-oriented and with a very flat surface, show robust ferroelectric properties at room temperature. They present a remnant polarization around 20 μC/cm2 without the need of a wake-up process, a large coercive electric field of around 3 MV/cm, an extremely long retention extending well beyond 10 years, and an endurance up to about 108 cycles.

Such outstanding properties in the nascent research on epitaxial HfO2-based ferroelectric films can pave the way for a better understanding of the effects of orientation, interfaces, strain, and defects on ferroelectricity in HfO2.

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