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PtSi Clustering in Silicon Probed by Transport Spectroscopy

PtSi Clustering in Silicon Probed by Transport Spectroscopy

Scientific Highlights Methodologies for materials science and nanotechnology 26 December 2013 5294 hits jags

fig PtSi

M. Mongillo, P. Spathis, G. Katsaros, S. De Franceschi, P. Gentile, R. Rurali, and X. Cartoixà
Physical Review X 3, 041025 (2013)

 

 

 

Metal silicides formed by means of thermal annealing processes are employed as contact materials in microelectronics. Control of the structure of silicide/silicon interfaces becomes a critical issue when the characteristic size of the device is reduced below a few tens of nanometers. Here, we report on silicide clustering occurring within the channel of PtSi/Si/PtSi Schottky-barrier transistors. This phenomenon is investigated through atomistic simulations and low-temperature resonant-tunneling spectroscopy. Our results provide evidence for the segregation of a PtSi cluster with a diameter of a few nanometers from the silicide contact. The cluster acts as a metallic quantum dot giving rise to distinct signatures of quantum transport through its discrete energy states.

 

See more posts on ICMAB related to: Riccardo Rurali

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