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Multiferroic Iron Oxide Thin Films at Room Temperature

Multiferroic Iron Oxide Thin Films at Room Temperature

Scientific Highlights Materials for information science and electronics 11 June 2014 5656 hits jags

RevisedFigures proofs

Martí Gich, Ignasi Fina, Alessio Morelli, Florencio Sánchez, Marin Alexe, Jaume Gàzquez, Josep Fontcuberta, Anna Roig.   
Advanced Materials

DOI: 10.1002/adma.201400990

Multiferroic behaviour at room temperature is demonstrated in ε-Fe2O3. The simple composition of this new ferromagnetic ferroelectric oxide and the discovery of a robust path for its thin film growth by using suitable seed layers may boost the exploitation of ε-Fe2O3 in novel devices.

 

Related Topics: Materials for information science and electronics

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