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Multiferroic Iron Oxide Thin Films at Room Temperature

RevisedFigures proofs

Martí Gich, Ignasi Fina, Alessio Morelli, Florencio Sánchez, Marin Alexe, Jaume Gàzquez, Josep Fontcuberta, Anna Roig.   
Advanced Materials

DOI: 10.1002/adma.201400990

Multiferroic behaviour at room temperature is demonstrated in ε-Fe2O3. The simple composition of this new ferromagnetic ferroelectric oxide and the discovery of a robust path for its thin film growth by using suitable seed layers may boost the exploitation of ε-Fe2O3 in novel devices.

 

See more posts on ICMAB related to: Materials for information science and electronics

Related Topics: Materials for information science and electronics

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