Competing Misfit Relaxation Mechanisms in Epitaxial Correlated Oxides

Competing Misfit Relaxation Mechanisms in Epitaxial Correlated Oxides

Scientific Highlights Materials for information science and electronics 13 March 2013 5617 hits jags

13-03-2013 10-09-05

Felip Sandiumenge*, José Santiso, Lluís Balcells, Zorica Konstantinovic, Jaume Roqueta, Alberto Pomar, Juan Pedro Espinós, and Benjamín Martínez     

Phys. Rev. Lett. 110, 107206 (2013)


DOI: 10.1103/PhysRevLett.110.107206

Strain engineering of functional properties in epitaxial thin films of strongly correlated oxides exhibiting octahedral-framework structures is hindered by the lack of adequate misfit relaxation models. Here we present unreported experimental evidence of a four-stage hierarchical development of octahedral-framework perturbations resulting from a progressive imbalance between electronic, elastic, and octahedral tilting energies in La0.7Sr0.3MnO3 epitaxial thin films grown on SrTiO3 substrates. Electronic softening of the Mn-O bonds near the substrate leads to the formation of an interfacial layer clamped to the substrate with strongly degraded magnetotransport properties, i.e., the so-called dead layer, while rigid octahedral tilts become relevant at advanced growth stages without significant effects on charge transport and magnetic ordering.

Related Topics: Materials for information science and electronics

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