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Asymmetric Resistive Switching Dynamics in BaTiO3 Tunnel Junctions

Asymmetric Resistive Switching Dynamics in BaTiO3 Tunnel Junctions

Scientific Highlights Materials for information science and electronics 25 January 2019 369 hits jags
M. Qian, I. Fina, F. Sánchez, J. Fontcuberta, Adv. Electron. Mater. 2018, 1800407. 

https://doi.org/10.1002/aelm.201800407

The resistive switching associated with polarization reversal is studied in detail in ferroelectric BaTiO3 tunnel junctions, with focus on the dynamics of the ferroelectric domain switching. It is observed that the transition between the high‐resistance state (HRS) and the low‐resistance state (LRS) is largely asymmetric being smooth from LRS to HRS, but proceeds via avalanches in the HRS‐to‐LRS transitions. It is shown that this distinct behavior is related to the presence of an imprint field in the junction and has important consequences on the junction's performance.

Influence of the magnetic field on the stability of the multiferroic conical spin arrangement of M n0.80 C o0.20 W O4

 

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