• SCIENTIFIC HIGHLIGHTS

Antiferromagnetic semiconductor memories. “The whole is more than the sum of its parts”

Antiferromagnetic semiconductor memories. “The whole is more than the sum of its parts”

Scientific Highlights Materials for information science and electronics 23 September 2014 5086 hits jags

I. Fina, X. Marti, D. Yi, J. Liu, J. H. Chu, C. Rayan-Serrao, S. Suresha, A. B. Shick, J. Zelezny, T. Jungwirth, J. Fontcuberta, R. Ramesh

Nature Communications 5, Article number: 4671;

 

doi:10.1038/ncomms5671

The electronic structure and the electric transport properties of the  antiferromagnetic semiconductor Sr2IrO4 is demonstrated to be largely dependent on the direction of the atomic spins, thus giving rise to a significant anisotropic magnetoresistance. Integration of these antiferromagnetic semiconducting layers with ferromagnetic electrodes may lead to new magnetic memory concepts.

See more posts on ICMAB related to: Materials for information science and electronics

Related Topics: Materials for information science and electronics

Also on ICMAB...

Search

Your experience on this site will be improved by allowing cookies Cookie Settings