PhD Candidate on Materials Science
Contact DataPhone: + 34 935 801 853
Fax: + 34 935 805 729
Dep: Magnetic Materials and Functional Oxides
I obtained my bachelor and master degree both majoring on Materials Science and Engineering in China. I accumulated sufficient knowledge and experience on metallic glasses and the relative magnetic properties, especially the fabrication and thermal treatment, during the 2.5 years' master study. Subsequently I changed my research topic to ferroelectric thin films during the Phd study, focusing on the photo-induced current and polarization screening behavior by photo-charges, and their correlation with strain, internal field, interface and electrodes status. Also participated a topic on reducing the band-gap of BaTiO3 by N doping. I planned to obtain my Phd degree on 2017.
Ferroelectric polarization screening behavior
Opto-ferroelectric resistance switching and memories
Surface water interaction with ferroelectric surface
Photocatalysis by ferroelectric thin films
Engineering of Band-gap of BaTiO3 by N doping
Magnetic transition of metallic glasses
Hard magnetic materials
2010. Bachelor of Science. North China Electric Power University, Beijing, China
2013. Master of Science. Beihang University, Beijing, China
Doctorate, University and Year:
2013-present. Phd Candidate. Institut de Ciència de Materials de Barcelona, Barcelona, Spain.
- Characterization of ferroelectric properties
- Characterization of photovoltaic effects
- Fabrication of metallic glasses
- Thermal treatment of metallic glasses
2013. PhD Fellowship from China Scholarship Council
2010. Excellent Graduate of Beijing
2009. First Prize Scholarship of the University
2008. Outstanding Volunteer in Beijing Olympic Games
F. Liu, I. Fina, R. Bertacco, J. Fontcuberta. Unravelling and Controlling Hidden Imprint Fields in Ferroelectric Capacitors. Scientific Reports, 2016, 6: 25028.
F. Liu, I. Fina, D. Gutiérrez, G. Radaelli, R. Bertacco, J. Fontcuberta. Selecting Steady and Transient Photocurrent Response in BaTiO3 Films. Advanced Electronic Materials, 2015, 1: 1500171.